以GaAs单晶为衬底的GaAlAs三元系红外光短波长双异质结半导体激光器,目前已走上实用化阶段.这种激光器的各种特性参数已基本上能满足应用系统的需求,它的应用开发领域正在越来越广.但是,这种半导体激光器目前还相当昂贵,价格远高于象晶体管之类的半导体器件,主要是因为制造的成品率很低,重复性和均匀性很差.为使这种半导体激光器更广泛地走向实用化,必须找出高可靠性高成品率和重复性好的器件制造方法,其中关键的技术是激光晶片的制造.我们采用液相外延技术制作这种激 The GaAlAs ternary infrared short wavelength double heterojunction semiconductor laser with GaAs single crystal substrate has been put into practical use at present, and the various characteristic parameters of this laser can basically meet the needs of the application system. However, this type of semiconductor laser is still relatively expensive at a much higher price than semiconductor devices such as transistors, mainly because of the low manufacturing yield, poor repeatability and uniformity To make this kind of semiconductor laser more practical, it is necessary to find high reliability and high yield and repeatability of the device manufacturing method, the key technology is the manufacture of laser chips.We use liquid phase epitaxy technology to make this Stimulation