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当前出现的结型光探测器,其结构为传统的平面p-n结。在这种表面杂质扩散层中掺掺浓度较高,光生少子寿命较低。这对于表面
The currently available junction photodetectors have a structure of a conventional planar p-n junction. Doping concentration in the surface of the impurity diffusion layer is higher, the life of the photo-less child is lower. This is for the surface