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一、Mo-CVD工艺发展简史气相外延制备Ⅲ-V族化合物最常用的方法是氯化物输运系统.自65年以来,国内外对此系统已进行了大量研究,当前已成功地用于制备各种微波、光电等器件所需的薄层材料.然而,氯化物输运系统本身的反应及其控制均较复杂,工艺的重复性,可控性亦较差,反应过程有腐蚀性气体,故难于生长异质外延膜.1969年H.M.Manasiver等从硅烷热分解制备兰宝石-硅异质外延中所得到的启示,首次提出采用挥发性的金属有机镓-三甲基镓(TMG)作为镓源.以气体AsH_3作为砷源,高频感应加热石墨基座,成功地在兰宝石或尖晶石衬底上生长了GaAs外延
A Brief History of Mo-CVD Process Development The most common method of vapor phase epitaxy for the preparation of Group III-V compounds is the chloride transport system. Since 65 years of extensive research on this system at home and abroad, it has been successfully used in Preparation of a variety of microwave, optoelectronic devices such as the required thin layer material.However, chloride transport system itself, the reaction and control are more complex, process repeatability, controllability is also poor, the reaction process corrosive gases , So it is difficult to grow heteroepitaxial film.In 1969 HMManasiver other from the silane thermal decomposition of sapphire-silicon heteroepitaxial epitaxial growth in the revelation of the first proposed the use of volatile metal organic gallium - trimethyl gallium (TMG) as Gallium source GaAs epitaxy was successfully grown on sapphire or spinel substrates using gas AsH 3 as a source of arsenic, high frequency induction heating of graphite susceptor