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对中波碲镉汞光伏探测器进行了实时gamma辐照效应研究.通过在辐照过程中对器件的电流—电压特性曲线进行测试,得到了器件电学性能随着gamma辐照剂量的变化.研究发现器件在辐照过程中表现出两种典型的辐照效应:电离效应和位移效应.电离效应可以通过辐照过程中类似光电流的产生来表现出来,而位移效应则通过辐照过程中器件串联电阻的增加来体现.两种效应都表现为总剂量效应.分析认为,由于位移效应引入的辐照损伤随着辐照剂量的增加越来越多,辐照电离效应产生的自由载流子产额随之逐渐降低,说明随着辐照剂量增加,电离效应逐渐降低,而位移效应则逐渐增强,导致器件性能衰退.
The real-time gamma irradiation effect of the medium wave HgCdTe photodetector was studied.Variation of the electrical performance of the device with the dose of gamma irradiation was obtained by testing the current-voltage characteristic of the device during the irradiation process. It is found that the device exhibits two typical radiation effects during irradiation: ionization effect and displacement effect.The ionization effect can be demonstrated by the generation of similar photocurrent in the irradiation process, and the displacement effect is through the device during irradiation Series resistance increase.This two kinds of effects are shown as the total dose effect.It is considered that the radiation damage induced by the displacement effect increases with the increase of irradiation dose.The free carriers generated by the radiation ionization effect The yield gradually decreased, indicating that with the increase of radiation dose, the ionization effect gradually decreased, while the displacement effect was gradually increased, leading to device performance degradation.