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文章介绍了32×32元长波碲镉汞混成焦平面器件研制及室温目标红外热成像演示。该器件采用MBE碲镉汞薄膜材料、全平面离子注入成结工艺、Si－CMOS读出电路、倒焊互联混成、背照工作模式。所研制的32×32元碲镉汞长波焦平面器件获得了突破性进展，最新结果为Dλ*＞1×1010cmHz1／2W－1，响应率不均匀性为12．4％，有效像元＞98％，NETD约为0．1K（FOV＝60°），响应波长8～10μm。该器件实现了室温目标红外热成像。该项工作处于国内领先水平。在研制过程中解决了一系列关键问题，为研制更大规模的红外焦平面器件奠定了坚实的技术基础。
This paper introduces the development of a 32 × 32 long wave HgCdTe hybrid coke flat surface device and the demonstration of room temperature target infrared thermal imaging. The device uses MBE HgCdTe thin film material, full planar ion implantation into the junction process, Si-CMOS readout circuit, inverted solder interconnect hybrid, back-illuminated mode of operation. The developed 32 × 32 element HgCdTe longwave focal plane device made a breakthrough, the latest results for the Dλ *> 1 × 1010cmHz1 / 2W-1, the response rate of 12.4% non-uniformity, the effective pixel> 98 %, NETD about 0.1K (FOV = 60 °), response wavelength 8 ~ 10μm. The device achieves room temperature target thermal imaging. The work is at the leading level in China. In the development process to solve a series of key issues for the development of larger-scale infrared focal plane devices and laid a solid technical foundation.