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本文对电子辐照 NTD 硅中少数戴流子寿命τ的测量结果进行了分析,获得了未退火时τ与 T(77K～300K)的线性关系和寿命的相对偏差|△τ|/■(=|τ-■|)≤10%,这些结果表明样品的均匀性相当好。等时等温退火后的τ值显示样品具有较好的热稳定性。
In this paper, the measurement results of minority carrier lifetime τ in electron-irradiated NTD silicon were analyzed and the linear relationship between τ and T (77K ~ 300K) and the relative deviation of lifetime (ΔT | | τ- ■ |) ≤10%, these results show that the sample uniformity is quite good. The isotherm annealed τ value shows that the sample has good thermal stability.