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本文在已提出的综合解析模型基础上，引入各相关参数特别是多晶－单晶之间的界面态俘获截面与温度关系的实验结果，给出了分析ＰＥＴ电流增益与温度关系的解析理论．以此为基础，详细分析了少子在多晶－单晶之间的界面氧化层两边界面态上的复合和少于以热发射的方式跃过杂质分凝和界面氧化层电荷形成的势垒并隧穿界面氧化层两种机理对ＰＥＴ电流增益随温度变化的影响，首次成功地把ＨＦ器件电流增益在高温区呈现出比普通金属接触晶体管温度系数大的实验结果归因于少子在界面氧化层两边的复合以及俘获截面与温度的关系σｐ．∞Ｔ－２．７，分析预示了界面氧化层破裂对ＲＣＡ器件电流增益温度特性的影响，得到了对获得低温度系数ＰＥＴ有益的结论．
Based on the proposed comprehensive analytical model, experimental results on the relationship between interfacial-state capture cross-sections and temperature are introduced based on the relevant parameters, especially polycrystalline-single crystal. The analytic theory for analyzing the relationship between PET current gain and temperature is given. Based on this, we analyzed in detail the combination of minority carriers on the interface states of the interfacial oxide layer between polycrystalline and single crystal and less than the potential barrier formed by the thermal emission to jump over the impurity segregation and interfacial oxide charge Tunneling interface oxide layer two mechanisms on the PET current gain with temperature changes, the first successful HF device current gain in the high temperature region than the average metal contact transistor temperature coefficient of large experimental results due to less son in the interface oxide layer Compounding of both sides and capture cross section with temperature. ∞T-2.7, the analysis predicts the interface oxide layer rupture on the RCA current gain temperature characteristics of the gain obtained for the low temperature coefficient of PET beneficial conclusions.