论文部分内容阅读
本文研究了 InGaAs外延层中的Be~+注入,采用SIMS、电化学C-V和Hall等方法进行了测试分析,结果表明:采用低于700℃的近似包封变温热退火可以获得较高的电激活率和表面质量,形成的pn结具有高击穿电压和低漏电流,此方法已应用于单片集成 InGaA_s PIN-JFET光接收器件的制作,获得了良好的器件特性.
In this paper, the Be ~ + implantation in the InGaAs epilayers is studied. The SIMS, electrochemical CV and Hall methods are used to analyze the results. The results show that the higher electrical energy can be achieved by annealing at a temperature less than 700 ℃ Activation rate and surface quality. The formed pn junction has high breakdown voltage and low leakage current. This method has been applied to the fabrication of monolithically integrated InGaA_s PIN-JFET photoreceiving devices, resulting in good device characteristics.