论文部分内容阅读
一、引言 众所周知,热氧化SiO_2中的Na~+是造成Si平面器件尤其是MOS器件性能不稳定的主要原因。如果在干氧氧化时,在氧化气氛中掺入适量的氯,就能够有效地消除Na~+,从而大大改善MOS器件的电性能。作为氯源,可以采用HCl、C_2HCl_3(三氯乙烯)、CCl_4和Cl_2气等。目前生产上广泛采用的是HCl和C_2HCl_3,对于提高MOS器件的稳定性,都已取得成功。但是这两种掺氯源都有固有的缺点:HCl有很强的腐蚀性,既污染环境,对管道的腐蚀又十分严重,需要经常更换管道;C_2HCl_3有毒,对操
I. INTRODUCTION It is well-known that Na ~ + in thermal oxidized SiO_2 is the main reason for instability of Si planar devices, especially MOS devices. If dry oxide is oxidized, the appropriate amount of chlorine is added in the oxidizing atmosphere, which can effectively eliminate Na ~ +, thus greatly improving the electrical properties of MOS devices. As the chlorine source, HCl, C 2 HCl 3 (trichlorethylene), CCl 4 and Cl 2 gas and the like can be used. Currently widely used in the production of HCl and C_2HCl_3, for improving the stability of MOS devices, have been successful. However, both of these chlorine-doped sources have inherent disadvantages: HCl is highly corrosive and pollutes the environment, causing serious corrosion of the pipeline and requiring frequent replacement of the pipeline; C_2HCl_3 is poisonous,