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日前,Vishay Intertechnology,Inc.宣布,推出业界首款采用小尺寸、热增强型SC-70封装的150 V N沟道MOSFET——SiA446DJ。Vishay Siliconix SiA446DJ的占位面积为2mm×2mm,在10 V下具有业内最低的导通电阻,可通过减少传导和开关损耗,在各种空间受限的应用中提高效率。SiA446DJ适用于隔离式DC/DC转换器里的初级侧开关、LED背光里的升压转换器,以及以太网供电(PoE)的供电设备开关、电信DC/DC砖式电源和便携式电子设备里电源管理应用的同步整流和负载切换。对于这些应用,Power-PAK SC-70的占位比3mm×2.8mmTSOP-6封装小55%,同时热阻低40%。,、
Vishay Intertechnology, Inc. today announced the SiA446DJ, the industry’s first 150 V N-channel MOSFET in a small, thermally enhanced SC-70 package. With 2mm x 2mm footprint, Vishay Siliconix SiA446DJ features the industry’s lowest on-resistance at 10 V, improving efficiency in a variety of space-constrained applications by reducing conduction and switching losses. The SiA446DJ is suitable for use in primary side switches in isolated DC / DC converters, step-up converters in LED-backlights, Power-over-Ethernet devices (PoE) switches, telecom DC / DC brick power supplies and portable electronics Manage applications for synchronous rectification and load switching. For these applications, the Power-PAK SC-70 occupies 55% less footprint than the 3mm × 2.8mm TSOP-6 package and has a 40% lower thermal resistance. ,,