论文部分内容阅读
质子辐照诱发电荷耦合器件(CCD)中的暗信号。建立了质子辐照电离损伤的辐射效应模型,通过应用半导体器件仿真软件MEDICI进行数值模拟计算,得出了质子辐照电离损伤诱发CCD表面暗信号随辐照注量增大的变化规律;建立了质子辐照位移损伤的辐射效应模型,数值模拟计算了质子辐照位移损伤诱发体缺陷导致CCD体暗信号增大的变化规律。综合比较了质子辐照损伤诱发增大的CCD表面暗信号、体暗信号和总的暗信号随质子辐照注量的变化规律。数值模拟计算结果与国外相关实验得出的规律相吻合。
Proton irradiation induces dark signals in charge coupled devices (CCDs). The radiation effect model of ionizing radiation damage induced by proton irradiation was established. The numerical simulation of the photon ionization damage induced by proton irradiation was carried out by MEDICI, a semiconductor device simulation software. Proton irradiation displacement damage radiation effect model, numerical simulation of proton irradiation displacement damage induced defects led to the CCD dark signal changes. The changes of dark signal, dark signal and total dark signal on CCD surface induced by proton irradiation were compared with those of proton irradiation. The results of numerical simulation are consistent with those obtained from foreign experiments.