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日本松下电器制作出InGaAsP/InP激光晶体管,在室温附近已实现连续振荡。激光晶体管是具有半导体激光器和异质结双极晶体管(HBI)两种光功能的集成器件,该公司着眼于研制在饱和时发光的HBT。该器件的光电子集成度很高,光学器件和电学器件的外延结构相同。器件结构是:在n-InP衬底上用液相外延法依次生长集电极层、基极层、发射极层,顶层。基极层由p-InGaAsP构成,厚0.2μm,宽几μm,杂质浓度是1×10~(17)cm~(-3)。发射极层、集电极层是n-InP(5×10~(17)
Japan’s Matsushita Electric InGaAsP / InP laser transistors produced, at room temperature has been achieved near the continuous oscillation. The laser transistor is an integrated device that has both optical capabilities of a semiconductor laser and a heterojunction bipolar transistor (HBI). The company looks at developing HBT that emits light at saturation. The device’s optoelectronic integration is high, the optical device and electrical device structure of the same extension. The device structure is that the collector layer, the base layer, the emitter layer and the top layer are sequentially grown on the n-InP substrate by the liquid phase epitaxy method. The base layer is made of p-InGaAsP with a thickness of 0.2 μm and a width of several μm, and the impurity concentration is 1 × 10 17 cm -3. Emitter layer, the collector layer is n-InP (5 × 10 ~ (17)