论文部分内容阅读
1 引言3DG135型硅超高频晶体管是贯彻国家军用标准的高可靠半导体器件代表品种之一。开设本课题的目的是为国家重点工程建立提供高可靠性保证等级的半导体器件军品生产线。为达到目前我国半导体器件的最高质量标准—国家军用标准的要求,电子工业部军工基础局明确规定如下攻关指标:(1)建立全所军工产品质量保证体系并经验收合格。(2)开展低温下h_(FE)降低机理和技术研究,在-55℃下测量h_(FE)平均变化率小于35％。(3)开展反向漏电机理和技术研究,使I_(CBO)额定值从贯标前的1μA(V_(CB)=10v)降低至80nA。(4)进行恒定加速度,温循和高温反偏试验研究,满足国军标筛选和试验要求。(5)管壳密封性研究,满足国军标要求。(6)本产品可靠性等级达到特军级和超特军级水平。
1 Introduction 3DG135-type silicon ultra-high frequency transistor is one of the representative varieties of high-reliability semiconductor devices that implement the national military standards. The purpose of the creation of this topic is to establish a military product military product line that provides a high level of assurance assurance for the state’s key projects. In order to meet the requirements of the highest quality standard of semiconductor devices in our country - the national military standard, the Ministry of Electronics Industry Ministry of Defense Industry Basic Bureau clearly stipulates the following research objectives: (1) Establishing the whole system of quality assurance for military products and passing the test. (2) To study the mechanism and technology of h FE at low temperature, the average rate of change of h FE at -55 ℃ was less than 35%. (3) To carry out reverse leakage mechanism and technical research, so I_ (CBO) rating from 1μA before pre-standard (V_ (CB) = 10v) to 80nA. (4) constant acceleration, temperature and high temperature reverse bias test research to meet the national military standard screening and test requirements. (5) Shell seal research to meet the national standard requirements. (6) The reliability level of this product reaches the level of special forces and super special forces.