本文实现了一种无隔离区的DYL MOS混合集成的新电路。考虑到多元逻辑电路的主要基本单元线性“与或’门和MOS集成电路的自隔离特点,只要对它的工艺过程稍加调整,即可在同一芯片上制成了互相隔离的适合线性“与或”门需要的大,小β晶体管和P沟道MOS晶体管。用这种集成技术,在N型硅片上试作了由双极晶体管和P沟道MOS晶体管组成的反相单元。这种电路工艺简单,可与DYL线性“与或”门在工艺上兼容,具有输入阻抗高、输出阻抗小,并可和DYL电路与TTL电路相容等优点。 In this paper, a novel integrated circuit of DYL MOS without isolation region is realized. Taking into account the self-isolation characteristics of the main basic unit linear AND logic gate and MOS integrated circuit of a multi-level logic circuit, as long as the process thereof is slightly adjusted, it is possible to make the suitable linear “ Or ”gate needs large and small β transistor and P-channel MOS transistor using this integrated technology, tried on the N-type silicon bipolar transistor and the P-channel MOS transistor composed of reverse phase unit. This The circuit technology is simple and can be technically compatible with DYL linear “AND” gate. It has the advantages of high input impedance, small output impedance and compatibility with DYL circuit and TTL circuit.