在高压大功率开关晶体管制造工艺中,如何才能精确地控制少数载流子寿命,这是器件工作者长期以来不断摸索、探讨的一个课题.其原因就在于半导体器件本质上是利用少子扩散运动的器件.少子寿命是器件最重要的特征参数之一.晶体管的许多电气参数诸如h_(FE)、V_(cos)、t_(on)、t_(off)等均与少子寿命有着非常密切的关系.可以说没有掌握少子寿命控制技术,就不能协调好功率开关管诸电参数,就不可能制造出高水平的开关晶体管.因此,少子寿命控 How to precisely control the minority carrier lifetime in high-voltage high-power switching transistor manufacturing process is a subject that device workers have been groping for a long time, and the reason is that the semiconductor device essentially utilizes the motion of minority-carrier diffusion Devices.Low lifetime is one of the most important characteristic parameters of a device.Many electrical parameters of a transistor, such as h FE, V cos, t on, t off and so on, are closely related to the lifetime of a minority carrier. It can be said that without controlling the life of young children without controlling the power switch can not coordinate the power parameters, it is impossible to create a high level of switching transistors. Therefore,