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描述了 Si:P 红外集成探测器的性能改进。这种探测器具有 p-i-n 二极管结构,但红外探测方式还包括有在低温下以局部杂质状态存储在 i 区内的电荷的光电发射。在红外照射之后,占有局部态的剩余电荷就场离子化。为了测出剩余电荷,对瞬态场离子电流进行数字化和集成化。增加光敏区 i 的厚度和杂质浓度可提高量子效率。随着杂质浓度的增加,110μm 厚的探测器,在波长27μm左右,其量子效率可从0.5%增加到70%左右,而最大电荷存储时间(红外集成时间)可以从12h以上减少到1s 左右。
Describes the performance improvement of the Si: P infrared integrated detector. This detector has a p-i-n diode structure, but the infrared detection method also includes a photoemission of charges stored in region i in a local impurity state at a low temperature. After IR exposure, the residual charge occupying the local state is field ionized. In order to measure the residual charge, the transient field ion current is digitized and integrated. Increasing the thickness and impurity concentration of the photosensitive region i can improve the quantum efficiency. With the increase of impurity concentration, the detector with 110μm thickness can increase its quantum efficiency from 0.5% to 70% at a wavelength of about 27μm, while the maximum charge storage time (IR integration time) can be reduced from above 12h to about 1s.