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采用时域有限差分(FDTD)方法,对Au纳米颗粒的尺寸和形貌对于其光学特性的影响进行了系统的理论研究。通过采用等离子体增强化学气相沉积(PECVD)、晶化处理、电子束蒸发和高温退火等工艺,制备基于局域表面等离子共振(LSPR)效应的富硅氮化硅发光芯片。利用拉曼光谱仪、扫描电子显微镜(SEM)、奥林巴斯显微镜等对不同结构Au纳米颗粒富硅氮化硅发光器件的特性进行了表征。研究表明,通过对Au纳米颗粒的大小、形状和分布合理优化,富硅氮化硅芯片的发光强度在570nm波长附近提升了7倍,增强峰的位置红移了10nm。
The influence of the size and morphology of Au nanoparticles on the optical properties of the Au nanoparticles has been systematically studied by using the finite-difference time-domain (FDTD) method. A silicon-rich silicon nitride light-emitting chip based on the localized surface plasmon resonance (LSPR) effect was prepared by plasma enhanced chemical vapor deposition (PECVD), crystallization, electron beam evaporation and high temperature annealing. The properties of Au-Si-rich silicon-nitride light-emitting devices with different structures were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and Olympus microscope. The results show that by optimizing the size, shape and distribution of the Au nanoparticles, the luminescent intensity of the silicon-rich silicon nitride increases seven times near 570nm and the red shift of the enhancement peak to 10nm.