论文部分内容阅读
通过透射－反射谱、红外光谱表征了类金刚石a—C：H：N薄膜微结构与氨含量的关系。实验结果表明，随N2／Ar气体流速比的增加，在a—C：H：N膜内N－H含量增加，C－H含量减少。在77～300K温度范围内，测量了a－c：H：N薄膜电导率与温度的依赖关系，讨论了其导电过程，估算了费米能级的态密度。
The relationship between the microstructure of diamond-like a-C: H: N films and ammonia content was characterized by transmission-reflectance spectroscopy and infrared spectroscopy. The experimental results show that the content of C-H decreases with the increase of N-H content in a-C: H: N film with the increase of N2 / Ar gas velocity ratio. The dependence of temperature on the conductivity of a-c: H: N thin films was measured in the temperature range of 77 ~ 300K. The conduction process was discussed and the state density of Fermi level was estimated.