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本文用通氧反应溅射法制备了Ｓｉ－Ｃｒ－Ｎｉ－Ｏ薄膜，用ＡＥＳ和ＸＰＳ测定和分析了所制得的薄膜，发现靶村组份配比的改变将导致构成薄膜的化合物种类的改变，Ｓｉ含量的提高有阻碍Ｃｒ参与氧化的趋势，通氧量和热处理对薄膜的氧化起着一定的作用．
In this paper, Si-Cr-Ni-O thin films were prepared by the oxygen-reactive sputtering method. The thin films were measured and analyzed by AES and XPS. It was found that the change of the ratio of the target components would lead to the formation of thin films Change, the increase of Si content hinders the oxidation of Cr in the trend, the amount of oxygen and heat treatment on the oxidation of the film plays a role.