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系统地研究了利用分子束外延方法在GaAs(001)衬底上外延生长的MnAlx薄膜的结构和垂直易磁化特性随组分及生长温度的依赖关系.磁性测试表明,可在较大组分范围内(0.4 x 1.2)获得大矫顽力的垂直易磁化MnAlx薄膜,然而同步辐射X射线衍射和磁性测试发现当x 0.6时MnAl薄膜出现较多的软磁相,当x>0.9时,MnAl薄膜晶体质量和化学有序度逐渐降低,组分为MnAl0.9时制备的薄膜有最好的[001]取向.随着生长温度的增加,MnAl0.9薄膜的有序度、垂直磁各向异性常数、矫顽力和剩磁比均增加,350 C时制备的MnAl0.9薄膜化学有序度高达0.9,其磁化强度、剩磁比、矫顽力和垂直磁各向异性常数分别为265 emu/cm3、93.3%、8.3 kOe(1 Oe=79.5775 A/m)和7.74 Merg/cm3(1 erg=10 7J).不含贵金属及稀土元素、良好的垂直易磁化性质、与半导体材料结构良好的兼容性以及磁性能随不同生长条件的可调控性使得MnAl薄膜有潜力应用于多种自旋电子学器件.
The structure and vertical susceptibility of MnAlx films epitaxially grown on GaAs (001) substrates by molecular beam epitaxy have been investigated systematically with the dependence of composition and growth temperature on magnetic properties of the as-grown MnAlx thin films. However, the synchrotron radiation X-ray diffraction and magnetic tests show that the MnAl films show more soft magnetic phases when x 0.6, and when x> 0.9, the MnAl films The crystal quality and chemical order gradually decreased, and the films with the composition of MnAl0.9 showed the best [001] orientation.With the increase of the growth temperature, the orderliness, perpendicular magnetic anisotropy The constants, coercivity and residual remanence increase. The chemical order of MnAl0.9 thin films prepared at 350 C is as high as 0.9. The remanence, residual magnetization, coercivity and perpendicular magnetic anisotropy are 265 emu / cm3, 93.3%, 8.3 kOe (1 Oe = 79.5775 A / m) and 7.74 Merg / cm3 (1 erg = 10 7 J) .It contains no noble metals and rare earth elements. Compatibility and magnetic properties with different growth conditions can be made of MnAl film has latent potential Applied to various spintronics devices.