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从理论和实验上对AgGaS2 晶体生长中易产生裂纹甚至开裂的现象与其热应力、晶体尺寸以及温度梯度、生长速率等生长参数之间的关系进行了研究。结果表明:晶体产生裂纹甚至开裂与生长速率、坩埚旋转速率、冷却速率所造成的热应力和热应变有关。采用改进的Bridgman法成功地生长出尺寸为12mm×30mm无裂纹的AgGaS2单晶体,给出了制备无裂纹、大尺寸AgGaS2 晶体的较佳生长工艺参数。
The relationship between the phenomenon of easy cracking and even cracking in the growth of AgGaS2 crystal has been studied both theoretically and experimentally with the growth parameters such as thermal stress, crystal size, temperature gradient and growth rate. The results show that the crystal cracks and even the cracking are related to the growth rate, the rotation rate of the crucible and the thermal stress and thermal strain caused by the cooling rate. The AgGaS2 single crystal with size of 12mm × 30mm has been successfully grown by using the improved Bridgman method. The optimal growth parameters of the AgGaS2 crystal with no crack and large size have been given.