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用溶胶一凝胶法制备纳米Ｖ２Ｏ５粉体，利用ＩＲ、ＥＳＲ结构分析手段研究晶体缺陷，并用阻抗谱研究它的导电性能。阻抗谱表明，在较低退火温度下得到的纳米Ｖ２Ｏ５粉体（平均粒径为５． ０ｎｍ）表现出超常的导电性能，其电导率高于其它样品 二个数量级。ＩＲ、ＥＳＲ分析指出，该样品中Ｖ２Ｏ５结构发生严重畸变，引起氧空位浓度增加，并认为是导致良好导电性能之主要原因。
The nano-V2O5 powder was prepared by sol-gel method. The crystal defects were studied by IR and ESR structural analysis, and its conductivity was studied by impedance spectroscopy. Impedance spectroscopy showed that the nano-sized V2O5 powder (average particle size of 5.0 nm) obtained at a lower annealing temperature showed an extraordinary conductivity with an electrical conductivity higher than that of the other samples by two orders of magnitude. The IR and ESR analyzes indicated that the V2O5 structure in the sample was severely distorted, causing an increase in oxygen vacancy concentration and was considered to be the major cause of good conductivity.