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一、实验方法本实验所使用的材料为P型<111>硅单晶,电阻率p=5-10Ω-cm,选用160keV,150keV,80keV的能量;5×10~(15)-1×10~(1(?))cm~(-2)的剂量;0.5-7μA/cm~2的束流密度;倾斜7°角注入砷。注入后样品用950—1100℃氮气退火,然后用四探针仪测量均匀性、方块电阻R(?),用范德堡法测量迁移率、薄层电阻R(?)、薄层载流子浓度N(?),并用活化分析法测量绝对剂量,得到了砷的激活率。用椭偏光法测量非晶层厚度,通过透射电子显微镜观察二次缺陷。用热偶测量注入层的靶温,得到了靶温与非晶层厚度的关系。
First, the experimental method The material used in this experiment for the P-type <111> silicon single crystal, resistivity p = 5-10Ω-cm, the choice of 160keV, 150keV, 80keV energy; 5 × 10 ~ (15) -1 × 10 ~ (1 (?)) Cm ~ (-2) dose; 0.5-7μA / cm ~ 2 beam current density; After injection, the samples were annealed at 950-1100 ° C for nitrogen, then the uniformity was measured with a four-probe apparatus, and the sheet resistance was measured as R (?). The mobility, sheet resistance, Concentration N (?), And the absolute dose was measured by activation analysis, the arsenic activation rate was obtained. The thickness of amorphous layer was measured by ellipsometry, and the secondary defects were observed by transmission electron microscope. Using the thermocouple to measure the target temperature of the injection layer, the relationship between the target temperature and the thickness of the amorphous layer was obtained.