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从1988年法国科研人员首次发现高磁阻效应(GMR:Giant MagnetoResistance)以来,由于这些材料的高灵敏度、良好的温度稳定性和在较大测量范围内优异的线性,已在磁场测量及其它领域中获得了广泛应用。本文主要介绍高磁阻材料几种结构及其在磁场传感器中的应用。同时还将这种材料与传统磁场测量技术做了比较。将传感器和信号调理及输出电路集成在一起的集成高磁阻传感器,使高磁阻技术得到了进一步应用,本文也做相应介绍。
Since the discovery of the GMR (Magnetoresistive Effect) by French researchers for the first time in 1988, the high sensitivity of these materials, their good temperature stability and their excellent linearity over a large measuring range have been used in magnetic field measurement and other fields Has been widely used. This article describes several structures of high reluctance materials and their applications in magnetic field sensors. It also compares this material with traditional magnetic field measurement techniques. The integration of the sensor and signal conditioning and output circuitry with an integrated high-reluctance sensor allows high-reluctance technology to be further applied and is also covered in this article.