论文部分内容阅读
本研究采用平面硅与纳米硅分别与旋涂法生长的[6,6]-苯基C61-丁酸甲酯(PCBM)形成有机–无机杂化异质结,对比研究了两种异质结界面电学特性的差异。结果显示,平面Si/PCBM和纳米Si/PCBM两种异质结都表现出明显的整流特性,但相对于平面Si/PCBM异质结,纳米Si/PCBM异质结有较大的导通电压和较小的电流密度。为了深入研究导致这种差异的相关物理机制,通过阻抗谱(IS)表征技术进一步研究了两种异质结因界面变化而产生的电阻、电容的变化趋势。阻抗测试分析表明,Si/PCBM异质结界面存在的大量缺陷致使寄生效应进一步增大,影响了器件中电荷的输运。
In this study, organo-inorganic hybrid heterojunctions were formed by [6,6] -phenyl C61-butyric acid methyl ester (PCBM) grown by planar silicon and nano-silicon respectively by spin-coating. Differences in interface electrical properties. The results show that both planar Si / PCBM and nano-Si / PCBM heterojunctions show obvious rectifying characteristics. However, compared with the planar Si / PCBM heterojunction, the nano-Si / PCBM heterojunction has larger turn-on voltage And smaller current density. In order to further study the related physical mechanism leading to such a difference, the impedance and capacitance of the two heterojunctions are further studied by the impedance spectroscopy (IS) characterization technique. Impedance test analysis shows that a large number of defects in the Si / PCBM heterojunction interface cause the parasitic effect to further increase, affecting the charge transport in the device.