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设计并制造出一种单片三级Ku波段GaAs FET功率放大器。外延层是用分子束外延生长的,FET具有源覆盖的几何结构和带n~+边缘的沟道。放大器在16.5GHz下,以12dB的增益和20％的效率获得了高达2W的输出功率。
Design and manufacture of a monolithic three-stage Ku-band GaAs FET power amplifier. Epitaxial layers are grown by molecular beam epitaxy, FETs have source-covered geometries and channels with n + edges. The amplifier achieves up to 2W of output power at 16.5GHz with 12dB gain and 20% efficiency.