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采用射频磁控溅射法在蓝宝石衬底上制备了上组分梯度、下组分梯度及单层BST薄膜,对比研究了三种结构BST薄膜的电、热性能。实验表明:下组分梯度BST薄膜的介电性能最优(优值因子为66.2),温度稳定性能最佳(在25～80℃范围内,介温变化率为7.8%)。此外,实验还运用X射线衍射仪、场发射电子扫描显微镜和透射电子显微镜对BST薄膜的晶体结构进行了研究,运用EDS能谱仪对BST薄膜的组分梯度进行了验证。
The upper component gradient, the lower component gradient and single-layer BST thin films were prepared by RF magnetron sputtering on sapphire substrates. The electrical and thermal properties of the three kinds of BST thin films were compared. The experimental results show that the dielectric properties of the lower component gradient BST films are the best (excellent value of 66.2), and the best temperature stability (temperature change rate of 7.8% in the range of 25 ~ 80 ℃). In addition, the crystal structure of BST thin films was also studied by X-ray diffraction, field emission scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The composition gradient of BST thin films was verified by EDS EDS.