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本文讨论了电荷耦合器件(CCD)的多晶薄膜的淀积,研究了多晶硅薄膜的掺杂,报导了以三氯化磷为淀积多晶硅薄膜的掺杂剂实验结果。文中还分析了多晶硅对CCD器件性能的影响。
This paper discusses the deposition of polycrystalline thin films on charge-coupled devices (CCDs), the doping of polycrystalline silicon thin films, and the experimental results of dopants containing phosphorus trichloride as a deposition polysilicon film. The paper also analyzes the impact of polysilicon on the performance of CCD devices.