一引言 1958年里德提出了雪崩二极管振荡器的理论,到1965年Johnston、Brand和Lowe分别在硅、砷化镓和锗的二极管中实现了微波振荡,至今这十多年来,从理论到器件的制造都发展到了相当完善的程度。目前雪崩二极管振荡器已成为很重要的微波功率源。从C波段一直到毫米波段都已经有产品,有些产品输出功率达到几瓦,实验室的水平就更高一些,比如砷化镓雪崩管在8千兆赫下输出大于8瓦,效率高达35％。在研制大功率、高效率砷化镓雪崩管振荡器中,人们发现了砷化镓雪崩二极管的偏 I. INTRODUCTION Reed invented the theory of an avalanche diode oscillator in 1958. By 1965 Johnston, Brand, and Lowe achieved microwave oscillations in diodes of silicon, gallium arsenide, and germanium, respectively. For more than a decade, from theory to Device manufacturing has developed to a very complete extent. At present, the avalanche diode oscillator has become a very important microwave power source. Products range from C-band up to the millimeter-wave range. Some products output watts at a few watts and laboratories are even higher. For example, gallium arsenide avalanche tubes output more than 8 watts at 8 GHz with efficiencies up to 35%. In the development of high-power, high-efficiency avalanche GaAs avalanche tube oscillator, people found a gallium arsenide avalanche diode bias