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Ga_(1-x)In_xAs(x>0.53)材料是未来长距离低损耗光纤通信的理想光源材料和探测器材料之一.我们采用水平常压MOCVD系统,在InP衬底上成功地生长了Ga_(1-x)In_xAs(x>0.53)/InAs_yP_(1-y)/Inp异质结材料.其中InAs_(1-y)P_y为组份阶梯变化的多层结构.由样品的(400)面X光衍射结果测定了各层组份.由二次离子质谱(SIMS)得到了样品剖面组份变化结果,证明InAs_(1-y)P_y层组份为阶梯状变化的.通过对光致发光结果和X光衍射结果比较,可以看到,InAs_yP_(1-y)层通过位错和弹性畸变二种方式来释放或积累Ga_(1-x)InxAs与InP间的失配应力,从而减少了Ga_1-xIn_xAs中的失配位错.有效地改善了Ga_(1-x)In_xAs的质量.已获得了x高达0.94表面光亮的Ga_(1-x)In_xAs/InAs_(1-y)P_y/InP异质结材料.
The Ga_ (1-x) In_xAs (x> 0.53) material is one of the ideal light source and detector materials for long-distance low-loss optical fiber communication in the future.We used a horizontal and vertical pressure MOCVD system to successfully grow Ga_ (1-x) In_xAs (x> 0.53) / InAs_yP_ (1-y) / Inp heterostructure materials, in which the InAs_ (1-y) P_y is a multi- X-ray diffraction results of the components of each layer were determined by the secondary ion mass spectrometry (SIMS) was obtained by the sample profile changes in the results show that the InAs_ (1-y) P_y layer component changes step by photoluminescence The results show that the InAs_yP_ (1-y) layer can release or accumulate the mismatch stress between Ga_ (1-x) InxAs and InP through dislocation and elastic deformation, The misfit dislocations in Ga_1-xIn_xAs effectively improve the quality of Ga_ (1-x) In_xAs. Ga_ (1-x) In_xAs / InAs_ (1-y) P_y / InP Heterojunction materials.