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半绝缘GaAs单晶是制备多种半导体器件的衬底材料,在外延生长等工艺条件下受热后往往产生一低阻表面层,伴随着电阻率变化还会有表面导电类型的转变和光致发光谱的变化。这些性质被称为“热转换”。在有“热转换”的衬底上制作的器件性能大大下降。因而研究转变的原因并有效地消除这种“热转换”是有重要意义的。顺磁共振、变温霍尔系数测量、光致发光测量及二次离子质谱分析等都是研究的手段。
Semi-insulating GaAs single crystal is a substrate material for preparing a variety of semiconductor devices. After being heated under conditions such as epitaxial growth, a semi-insulating GaAs single crystal tends to generate a low resistance surface layer. With the change of resistivity, the surface conductivity type and photoluminescence The change. These properties are called “heat conversion.” The performance of devices made on substrates with “thermal conversion” is greatly diminished. It is therefore important to study the causes of change and eliminate this “heat transfer” effectively. Paramagnetic resonance, variable Hall temperature coefficient measurement, photoluminescence measurement and secondary ion mass spectrometry analysis are all means.