论文部分内容阅读
本文讨论了介质盖栅SIT的基本特性。在SIT小信号S参数和静态特性的基础上,得到了SIT非线性等效电路模型。采用Volterra级数法,分析了包含三种主要非线性源的SIT微波功放的互调失真和增益压缩特性。指出引起SIT互调失真和增益压缩的主要原因是跨导G_m的非线性,其次是栅源电容C_(gs)的非线性变化和漏电导G_d的非线性变化的作用。还指出了SIT非线性失真与输入功率电平和偏置条件的关系。分析结果得到了实验的证实。
This article discusses the basic characteristics of dielectric gated SITs. Based on S-parameters and static characteristics of SIT small signal, a nonlinear equivalent circuit model of SIT is obtained. Using Volterra series method, the intermodulation distortion and gain compression characteristics of SIT microwave power amplifier with three main nonlinear sources are analyzed. It is pointed out that the main cause of SIT intermodulation distortion and gain compression is the nonlinearity of transconductance G_m, followed by the non-linear variation of gate-source capacitance Cgs and the nonlinear variation of leakage conductance G_d. The relationship between SIT nonlinear distortion and input power level and bias conditions is also pointed out. The analysis results have been confirmed by experiments.