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Ta_2O_5是一种性能优良的绝缘体材料,相对于传统MOS工艺中的SiO_2,Si_3N_4而言,它具有很高的介电常数(ε_(Ta_2O_5)=25,ε_(SiO_2)=4,ε(Si_3N_4)=7),高阻抗,低内应力,及耐高压等优点。因此,它在未来的Si集成电路工艺中具有潜在的应用前景。迄今为止,人们尝试了用许多方法来制备Ta_2O_5薄膜,其中包括反应性溅射沉积,低压化学气相沉积(LPCVD),等离子体增强化学气相沉积(PECVD),光诱导化学气相沉积等,并对薄膜的结构和电学特性做了大量的研究工作。然而,对脉冲激光沉积的Ta_2O_5薄膜的电学性质的研究还未见报道,关于
Ta_2O_5 is a kind of excellent insulator material with high dielectric constant (ε_ (Ta_2O_5) = 25, ε_ (SiO_2) = 4, ε (Si_3N_4)), relative to traditional Si02 and Si_3N_4. = 7), high impedance, low internal stress, and high voltage and other advantages. Therefore, it has potential application prospect in the future Si integrated circuit craft. So far, many attempts have been made to prepare Ta 2 O 5 thin films, including reactive sputter deposition, low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), light induced chemical vapor deposition, etc., The structure and electrical properties of a large number of research work done. However, the study on the electrical properties of pulsed laser deposited Ta 2 O 5 thin films has not been reported yet.