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基于气液固(VLS)反应机制,采用厚度为2~3 nm的金属镍作为催化剂,金属镓和氨气分别用作Ⅲ族和Ⅴ族的生长源,在自行改造的化学气相沉积(CVD)设备内获得了大面积GaN纳米线。通过扫描电镜(SEM)、能量分散X射线荧光(EDX)谱和透射电镜(TEM)测试,表明GaN纳米线的成核及生长与反应室气路结构有密切关系,水平弯管式气路将有利于GaN纳米线的生长。此外,生长气流将直接影响GaN纳米线的生长状况,生长温度为920℃、NH3和N2的气流量分别为100和500 cm3/min时,可以获得形貌较好的纳米线。同时,探索了Ga源与样品位置间的距离对纳米线中Ga和N的质量分数的影响,并分析了其影响机理。
Based on the VLS reaction mechanism, metal nickel with thickness of 2 ~ 3 nm was used as catalyst, and metal gallium and ammonia gas were used as growth sources of group Ⅲ and group V, respectively. In self-modified chemical vapor deposition (CVD) A large area of GaN nanowires is obtained in the device. The results of scanning electron microscopy (SEM), energy dispersive X-ray fluorescence (XRD) and transmission electron microscopy (TEM) show that the nucleation and growth of GaN nanowires are closely related to the gas path structure in the reaction chamber. Is conducive to the growth of GaN nanowires. In addition, the growth of the flow will directly affect the growth of GaN nanowires, the growth temperature of 920 ℃, NH3 and N2 gas flow were 100 and 500 cm3 / min, we can get a better morphology of the nanowires. At the same time, the influence of distance between Ga source and sample position on the mass fraction of Ga and N in nanowires was explored, and the influence mechanism was analyzed.