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本文介绍了用全密封直拉(FEC)法与掺杂等价元素 In 相结合生长无位错 GaAs 单晶。实验表明可以成功地获得直径为25～30mm 的无位错半绝缘GaAs 单晶。从籽晶沿〈100〉轴直接传播下来的位错只有几百个。采用 FEC 方法的关键主要是因为减少了晶体表面 As 元素的挥发。用这个方法也能拉制直径为 50mm 的几乎无位错的单晶。
This paper describes the growth of dislocation-free GaAs single crystals by a combination of all-encapsulated Czochralski (FEC) and doped dopant In. Experiments show that we can successfully obtain a diameter of 25 ~ 30mm of dislocation-free semi-insulating GaAs single crystal. Only a few hundred dislocations propagate directly from the seed along the <100> axis. The key to using the FEC method is to reduce the volatilization of As elements on the crystal surface. This method also enables the formation of almost dislocated single crystals with a diameter of 50 mm.