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采用溶胶-凝胶法在Si衬底上制备Al2O3:Eu3+薄膜;并采用DTA-TG、XRD、SEM、AFM及光致发光光谱对其进行一系列表征,分析Al2O3:Eu3+薄膜的发光机制,探讨热处理温度和Eu3+掺杂浓度对发光性能的影响规律。结果表明,采用溶胶-凝胶法制备工艺,得到发光强度高的Al2O3:Eu3+薄膜,薄膜的最佳激发波长为265nm,Eu3+的最佳掺杂浓度为10mol%,在265nm光激发下,最强的发射峰出现在617nm附近;采用溶胶-凝胶法制备得到Al2O3:Eu3+薄膜表面致密、平整且无裂纹产生,表面粗糙度约为1.4nm,有利于硅基光电子器件的制备和应用。
The Al2O3: Eu3 + thin films were prepared on the Si substrate by sol-gel method. The structures of the films were characterized by DTA-TG, XRD, SEM, AFM and photoluminescence spectra. Effect of Heat Treatment Temperature and Eu3 + Doping Concentration on Luminescent Properties. The results show that the best luminescence intensity of Al2O3: Eu3 + thin film is 265nm and the optimum doping concentration of Eu3 + is 10mol%, which is the strongest under 265nm excitation with the sol-gel method. The emission peak appears at 617nm. The surface of Al2O3: Eu3 + thin film prepared by sol-gel method is dense, flat and free from cracks. The surface roughness is about 1.4nm, which is propitious to the preparation and application of silicon-based optoelectronic devices.