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本文通过对Au/n-CdTe肖特基二极管I-V-T测量得出:在室温附近,势垒高度随温度升高而线性增加,增加速率约为 9 ×10~(-4)eV/K.这一结果与 Hattori 等对InP的研究结果一致,
In this paper, IVT measurement of Au / n-CdTe Schottky diode shows that at room temperature, the barrier height increases linearly with increasing temperature, and the increasing rate is about 9 × 10 -4 eV / K The results are consistent with the findings of InP by Hattori et al.