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研究了退火对α-Si_xC_(1-x):H薄膜红外吸收和光致发光性质的影响.实验结果表明:低温退火使与氢有关的红外吸收和积分发光强度增加;而高温退火使与氢有关的红外吸收和积分发光强度减弱;同时,随着退火温度升高,光致发光光谱的峰值能量位置移向低能.文中对退火引起红外吸收和光致发光性质的变化机理进行了讨论。
The effects of annealing on the infrared absorption and photoluminescence properties of α-Si_xC_ (1-x): H thin films were investigated.The experimental results show that the low-temperature annealing increases the hydrogen absorption and the integrated emission intensities, while the high temperature anneals The infrared absorption and the integral luminescence intensity are weakened.At the same time, as the annealing temperature increases, the peak energy position of photoluminescence shifts to low energy.The mechanism of the change of infrared absorption and photoluminescence caused by annealing is discussed in this paper.