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本专利介绍一种用于制作碲化镉半导体辐射探测器的方法,该方法包括以下一些步骤:将一块单片的半导体晶片(1)切割成许多个分段,给晶片两侧镀上金属以形成电极(2),晶片的每个分段形成一个元件(3)。切割过程会使切割两侧
This patent describes a method for making a cadmium telluride semiconductor radiation detector comprising the steps of cutting a monolithic semiconductor wafer (1) into a plurality of segments, plating the sides of the wafer with a metal Electrodes (2) are formed, each segment of the wafer forming one element (3). The cutting process will cut both sides