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利用常规的层状结构的空间电荷限制电流法,测得了具有一定厚度 d 的 GD-a-Si_(1-x)C_x∶H 和 GD-a-Si_(1-x)N_x∶H 膜不同含量 x 时的隙态分布 N(E):对 GD-a-Si_(1-x)C_x∶H 膜(d(?)1μm),当 x 为0、0.1、0.8时,平衡费米能级附近处的隙态密度 N(E_(?)~o)分别为2×10~(15)、4×10~(15)、6.2×10~(16)/cm~3·eV,对 GD-a-Si_(1-x)N_x∶H 膜(d(?)1μm),当 x 为0、0.05、0.2时,N(E_F~o)分别为2×10~(15)、3×10~(15)、4.5×10~(16)/cm~3·eV;得到了 GD-a-Si∶H 膜的隙态分布与膜厚度的关系,发现随着膜厚度的增加 N(E_F~o)在减小,当 d<1μm 时,N(E_F~o)约为10~(16)/cm~3·eV 的数量级,当 d>1μm 时,N(E_F~o)约为10~(15)/cm~3·eV 的数量级。对共面电极结构的样品,用温度调制空间电荷限制电流法(TM-SCLC),测得了 GD-a-Si∶H 膜的隙态分布,并对光处理前后的样品进行比较,发现强光照后存在有光诱导效应。我们对所得结果作了初步说明。
The space charge limiting current method of the conventional layered structure was used to measure the content of GD-a-Si_ (1-x) C_x:H and GD-a-Si_ (1-x) Nx: H films with a certain thickness d Gap distribution at x (E): For the GD-a-Si_ (1-x) C_x:H film (d (?) 1μm), when x is 0, 0.1, 0.8, the equilibrium Fermi level (E_ (?) ~ O) were 2 × 10 ~ (15), 4 × 10 ~ (15) and 6.2 × 10 ~ (16) / cm ~ 3 · eV, respectively. (D (?) 1μm), the values of N (E_F ~ o) are 2 × 10 ~ (15) and 3 × 10 ~ The relationship between Gd-a-Si: H film gap distribution and film thickness was found. It was found that with the increase of film thickness, N (E_F ~ o) N (E_F ~ o) is on the order of 10-16 / cm ~ 3 · eV for d <1μm and about 10-15 for d> 1μm ) / cm ~ 3 · eV. For the samples with coplanar electrode structure, the space distribution of GD-a-Si:H film was measured by temperature-modulated space-charge-limited current method (TM-SCLC), and the samples before and after light treatment were compared. There is a light-induced effect after. We made a preliminary explanation of the results obtained.