在半导体器件生产中为提高器件的可靠性,避免工艺中划伤铝膜,以致影响划片后管芯成品率,可在刻铝后先淀积一层SiO_2保护膜.当在铝引线上淀积SiO_2保护膜后,必须解决保护膜引线孔的刻蚀问题.通常对SiO_2膜的刻蚀基本分两类:一是液相化学腐蚀,一是等 In the production of semiconductor devices to improve the reliability of the device to avoid the process of scratching the aluminum film, so as to affect the die yield after dicing, can be deposited in the first layer of silicon after the protective film of SiO2 .When the aluminum lead on the lake After the SiO 2 protective film is deposited, the etching problem of the lead hole of the protective film must be solved, and the etching of the SiO 2 film is generally divided into two types: first, liquid chemical corrosion,