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近年来,自对准耐高温栅工艺(SAG)已成为国际上研究GaAs VHSIC的主要工艺途径之一。这是因为该工艺流程短,成品率高。但它需要选择制作肖特基势垒栅的材料,以在高温800℃)退火后势垒特性基本不退化。已报导过的难熔材料有TiW,TiWSi,WAl,WN,WSi等。自1985年第17届SSDM上报导了一种LaB_6/GaAs势垒的耐高温特性之后,LaB_6成为自对准耐高温栅GaAs工艺的一种新的有希望的材料。为配合开展势垒特性研究的结果用于将来的器件工艺,进行了以下专题实验:1)制LaB_6栅工艺与增强型MESFET的薄有源层相容性研究;2)LaB_6栅与离子注入层同时高温退火的工艺研究;3)自对准LaB_6栅离子注入形成高浓度(N~+)接触区的结构研究;4)双层布线中简化互连工艺的研究。
In recent years, self-aligned high temperature resistant gate process (SAG) has become one of the major international research methods GaAs VHSIC process. This is because the process is short, high yield. But it requires the choice of material for making the Schottky barrier to substantially not degrade the barrier characteristics after annealing at a high temperature of 800 ° C. Has been reported refractory materials are TiW, TiWSi, WAl, WN, WSi and so on. Since the 17th SSDM reported on the high temperature resistance of a LaB_6 / GaAs barrier in 1985, LaB_6 has become a promising new material for self-aligned high-temperature gate GaAs process. In order to cooperate with the results of the research on barrier characteristics for future device processes, the following special experiments were conducted: 1) thin active layer compatibility of LaB_6 gate technology and enhanced MESFET; 2) LaB_6 gate and ion implantation layer Simultaneously, the research of high temperature annealing process is also carried out. 3) Self-alignment structure research of LaB_6 gate ion implantation to form high concentration (N ~ +) contact region; 4) Study of simplified interconnection process in double-layer wiring.