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一、引言 以TiSi_2为代表的难熔金属硅化物,由于具有铝及掺杂多晶硅所不具备的特点,已成为VLSI中制作栅电极和互连线的重要材料。CVD法制备硅化钛膜的突出优点是台阶覆盖性好,有利于批量生产。然而,用卧式PECVD制备硅化钛膜的方法至今尚未见报道。 PECVD法淀积的硅化钛膜,必须经退火结构才能稳定。目前,常用瞬态退火和常规热退火(高温退火)两种方法。常规热退火能和常规工艺兼容,而瞬态退火则可减少原子的互扩散。 笔者用平板型PECVD设备,在典型工艺条件下淀积了薄膜,分析了高温退火对薄膜电阻率、组分、结构的影响。
I. INTRODUCTION Refractory metal silicides, typified by TiSi2, have become important materials for gate electrode and interconnection in VLSI due to the features they do not have in aluminum and doped polysilicon. The salient advantage of the CVD process for the preparation of titanium silicide films is good step coverage and is good for mass production. However, the preparation of titanium silicide films by horizontal PECVD has not been reported yet. PECVD deposition of titanium silicide film, the structure must be annealed to stabilize. At present, two methods of transient annealing and conventional thermal annealing (high temperature annealing) are commonly used. Conventional thermal annealing can be compatible with conventional processes, while transient annealing can reduce the mutual diffusion of atoms. The author uses a flat-type PECVD equipment, deposited under typical process conditions film, analyzed the high-temperature annealing of the film resistivity, composition, structure.