一、引言随着现代半导体工程的日趋精细、复杂和严格化,使得采用微电子测试图形检测和监控集成电路制作工艺,被人们普遍地重视起来,并且已经被推广到半导体工程中的各个领域和各个环节。我们在研制双极I~2L RAM电路过程中,为了确保其电路性能稳定、可靠,根据自己的工艺现状,拟定了一项综合性的工艺监控计划。在该计划中,除了常规工艺规程检查之外,还需要特殊设计的微电子测试结构,以便获得所需要的工艺物理参数和电路功能参数。这些测试结构是一些与集成电路工艺相容的微 I. INTRODUCTION With the ever-increasing sophistication, complexity and strictness of modern semiconductor engineering, the use of microelectronic test patterns to detect and monitor integrated circuit fabrication processes has gained widespread attention and has been extended to various fields of semiconductor engineering and Each link. In the process of developing the bipolar I ~ 2L RAM circuit, in order to ensure its circuit performance is stable and reliable, we developed a comprehensive process monitoring plan according to the current situation of our process. In this program, in addition to routine process inspection, specially designed microelectronic test structures are also required in order to obtain the required process physical and circuit functional parameters. These test structures are some micro-compatible with the integrated circuit technology