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使用半导体器件数值分析工具 DESSISE- ISE,对正向栅控二极管 R- G电流表征 NMOSFET沟道 pocket或halo注入区进行了详尽的研究 .数值分析表明 :由于栅控正向二极管界面态 R- G电流的特征 ,沟道工程 pocket或halo注入区的界面态会产生一个独立于本征沟道界面态 R- G电流特征峰的附加特征峰 .该峰的幅度对应于 pocket或 halo区的界面态大小 ,而其峰位置对应于 pocket或 halo区的有效表面浓度 .数值分析还进一步显示了该附加特征峰的幅度对 pocket或 halo区的界面态变化的敏感性和该峰的位置对 pocket或 halo区的有效表面浓度变化的敏感性 .根据提出的简单表达式 ,可以用实验得到的 R- G电流的特征直接抽取沟道工程的 pocket或 halo注入区的界面态和有效表面浓度
DESSISE-ISE, a semiconductor device numerical analysis tool, has been used to characterize the NMOS gate channel pocket or halo injection region for forward-gate diode R-G current.Numerical analysis shows that due to the gate-controlled forward diode interface state R-G The characteristics of the current, channel engineering pocket or halo interface states create an additional characteristic peak independent of the characteristic R-G current signature of the intrinsic channel interface state. The amplitude of this peak corresponds to the interface state of the pocket or halo region Size and its peak position corresponds to the effective surface concentration of the pocket or halo region.The numerical analysis further shows the sensitivity of the magnitude of this additional characteristic peak to the change in interface state of the pocket or halo and the position of this peak on the pocket or halo The sensitivity of the effective surface concentration variation of the region.According to the proposed simple expression, the interface state and the effective surface concentration of the pocketed or halo implanted region of the channel engineering can be extracted directly by using the characteristics of the experimental R-G current,