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采用反相方法测试台架在实际工作条件下,对ABB公司提供的实验性3.3kV IGCT进行了特性测定。这种器件在硬开关运行下的导通损耗非常小,开关损耗也降低了。这就表明一种新型大功率/中电压半导体器件已经问世,它们可以用于较高开关频率(超过1kHz)和大电流工况,以改善大功率变换器的性能。
The reverse phase method test bench was used to measure the characteristics of the experimental 3.3kV IGCT supplied by ABB Company under the actual operating conditions. This device in the hard switching operation under the conduction loss is very small, switching losses are also reduced. This shows that a new type of high-power / medium voltage semiconductor devices have been developed that can be used at high switching frequencies (over 1kHz) and high-current conditions to improve the performance of high-power converters.