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本文主要研究考虑量子效应的高k栅介质SOIMOSFET器件特性.通过数值方法自洽求解薛定谔方程和泊松方程,得到了垂直于SiO2/Si界面方向上载流子波函数及能级的分布情况,结合Young模型,在考虑短沟道效应和高k栅介质的情况下,对SOIMOSFET的阈值电压进行模拟分析.结果表明:随着纵向电场的增加,量子化效应致使反型层载流子分布偏离表面越来越严重,造成了有效栅氧化层厚度的增加和阈值电压波动.采用高k栅介质材料,可以减小阈值电压,抑制DIBL效应.较快的运算速度保证了模拟分析的效率,计算结果和ISE仿真结果的符合说明了本文的模型精度高.
In this paper, we mainly study the characteristics of high-k gate dielectric SOIMOSFETs that consider quantum effects.Furthermore, the Schrödinger equation and Poisson equation are solved by the numerical method, and the distribution of carrier wave function and energy level perpendicular to the interface of SiO2 / Si is obtained. Model, considering the short channel effect and high-k gate dielectric, the threshold voltage of SOIMOSFET is simulated.The results show that with the increase of longitudinal electric field, the quantization effect causes the drift of the inversion layer to deviate from the surface Which leads to the increase of the effective gate oxide thickness and the threshold voltage fluctuation.The threshold voltage can be reduced and the DIBL effect can be reduced by adopting the high k gate dielectric material.The faster operation speed ensures the efficiency of the simulation analysis and the calculation results and The coincidence of ISE simulation results shows that the model of this paper has high precision.