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在水平法生长GaAs单晶过程中常常发生晶体与石英舟的沾润,而引起单晶位错大幅度增殖,严重时会导致长成李晶和多晶.近年来,国内外对沾润机理和解决措施进行了一些研究.山口正夫等喷砂的石英舟进行高温处理,舟表面形成α-方石英微晶层,可得到具有金属光泽的单晶.Yamayuchi等发现在生长GaAs单晶后石英舟喷砂表面形成α-方石英粉末层减少熔体与石英舟直接接触避免和舟沾润.本文采取HCI和Ga在H_2气氛下对石英舟进行高温处理工艺(简称HCl-H_2-Ga处理)配合合理的拉品工艺可避免沾润,降低位错,进一步提高GaAs纯度.并根据实验结果确定合理的处理舟工艺.
In the GaAs single crystal growth process, crystal and quartz boat often occur in the process, causing single crystal dislocation greatly proliferated, resulting in severe growth of Li Jing and polycrystalline.In recent years, And measures to solve some of the research.Yamaguchi and other sand blasting quartz boat for high temperature treatment, the formation of the a-square quartz microcrystalline layer on the boat surface can be obtained with a metallic luster of single crystal.Yamayuchi other found in the growth of GaAs single crystal quartz The formation of α-cristobalite powder layer on the sand-blasting surface of the boat reduces the direct contact between the melt and the quartz boat and avoids wetting of the boat. In this paper, HCI and Ga were used to treat the quartz boat at high temperature (referred to as HCl-H 2 -Ga treatment) With a reasonable pulling product process can avoid the Run, reduce dislocation, and further improve the purity of GaAs. According to the experimental results to determine a reasonable process of the boat.