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在热丝化学气相沉积体系中,系统研究了气压对CH4/H2/Ar气氛中纳米金刚石薄膜生长的影响。研究发现,体系气压对纳米金刚石的生长有很大的影响。在40 torr的气压下,在CH4/H2/Ar气氛中的Ar气含量需高达90%才能保证纳米金刚石薄膜的生长,但降低气压至5 torr时,50%的Ar气含量即可保证纳米金刚石薄膜的生长。压力对薄膜生长表面的气体浓度的影响是这个转变的主要原因。在同样的Ar含量下,在5 torr下的C2活性基团的浓度高于40 torr的浓度,因而低的Ar含量会保证纳米金刚石薄膜的生长。
In hot filament chemical vapor deposition system, the influence of pressure on the growth of nanocrystalline diamond films in CH4 / H2 / Ar atmosphere has been systematically investigated. The study found that the system pressure has a great impact on the growth of nano-diamond. Under the pressure of 40 torr, the Ar gas content in CH4 / H2 / Ar atmosphere needs to be as high as 90% to ensure the growth of the nano-diamond film. However, when the pressure is reduced to 5 torr, 50% Ar gas content can ensure that the nano-diamond Film growth. The effect of pressure on the gas concentration of the film growth surface is the main reason for this shift. At the same Ar content, the concentration of C2 active groups at 5 torr is above the 40 torr concentration, so a low Ar content will ensure the growth of the nanodiamond film.