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设计了一种新的ＩｎＰ／Ｉｎ０．７５Ｇａ０．２５Ａｓ／ＩｎＰ器件结构，其特点在于采用ＩｎＰ衬底，高ｘ值的ＩｎｘＧａ１－ｘＡｓ沟道，选用ＩｎＰ作为势垒层，从而避免了用含Ａｌ势垒层有可能引起的ＤＸ中心对器件性能的不利影响。在器件工艺实验方面，提出将ＫｒＦ准分子激光无铬移相光刻应用于栅图形加工、设计，组装了一套实验系统，可重复可靠地得到剖面陡直的０．３～０．３５μｍ胶阴线条，这一工艺技术完全与现有器件工艺技术兼容，为ＨＥＭＴ器件深亚微米栅加工提供了一个新的可供选择的方法
A new InP / In0.75Ga0.25As / InP device structure is designed, which is characterized by InP substrate, high x-value InxGa1-xAs channel, the choice of InP as the barrier layer, thus avoiding the use of Al-containing potential The barrier layer may cause the DX center to adversely affect device performance. In the device process experiment, KrF excimer laser chromeless phase shift lithography was applied to gate pattern processing. An experimental system was designed and assembled to obtain the stripped 0.3 ~ 0.35μm glue repeatedly and reliably Yin Xian, this process technology fully compatible with existing device technology, HEMT devices for deep sub-micron gate processing provides a new alternative method